LOW-TEMPERATURE (850-DEGREES-C) SILICON SELECTIVE EPITAXIAL-GROWTH ON HF-TREATED SI (100) SUBSTRATES USING SIH4-HCL-H2 SYSTEMS

被引：6

作者：

MIYAUCHI, A

INOUE, Y

SUZUKI, T

机构：

[1] Hitachi Research Laboratory, Hitachi Limited, Hitachi-shi, Ibaraki-ken 319-312

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 11期

关键词：

D O I：

10.1149/1.2085438

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

HF-treated substrates and silane (SiH4), hydrogen chloride (HCl), hydrogen (H-2) systems were used for low-temperature (850-degrees-C) silicon (Si) selective epitaxial growth (SEG). Conventional low-pressure chemical vapor deposition equipment was used for Si deposition. No Si nuclei were observed on SiO2 when measured by scanning electron microscopy after SEG. The {111} and {311} facet planes were observed by transmission electron microscopy. No defects were generated either at the epitaxial layer/substrate interface or the epitaxial layer/SiO2 sidewall on an atomic scale.

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页码：3480 / 3483

页数：4

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