SB SURFACE SEGREGATION DURING HEAVY DOPING OF SI(100) GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY

被引：13

作者：

HOBART, KD ^{[1
]}

GODBEY, DJ ^{[1
]}

THOMPSON, PE ^{[1
]}

SIMONS, DS ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,DIV SURFACE & MICROANAL SCI,GAITHERSBURG,MD 20899

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sb surface segregation and doping during Si(100) molecular beam epitaxy at low temperature have been studied by depth profiling with secondary ion mass spectrometry, x-ray photoelectron spectroscopy, and conductivity measurements. We find that at a growth temperature near 320-degrees-C complete donor activation and doping densities near 5 X 10(20) CM-3 are obtainable. For temperatures between 320-500-degrees-C, measurements point to the existence of distinct surface segregation regimes. For dilute surface and bulk Sb concentrations the measurements reveal a region where the surface segregation is constant and bulk and surface concentrations are linearly related. For bulk concentrations near the solid solubility limit, the surface segregation increases rapidly with increasing bulk concentration for temperatures between 350-450-degrees-C. Finally, for Sb-saturated surfaces the surface segregation actually decreases, and doping levels exceeding the solid solubility limit are possible.

引用

页码：1115 / 1119

页数：5

共 20 条

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