POSTGROWTH ANNEALING OF LOW TEMPERATURE-GROWN SB-DOPED SI MOLECULAR-BEAM EPITAXIAL-FILMS

被引：14

作者：

HOBART, KD

GODBEY, DJ

THOMPSON, PE

机构：

[1] Naval Research Laboratory, Electronics Science and Technology Division, Code 6812, Washington

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sb-doped Si films have been grown on (100) Si substrates at low temperature (approximately 350-degrees-C) by molecular beam epitaxy. Through coevaporation with Sb, very high doping efficiencies were achieved over a carrier concentration range of 1x10(17) to 1x10(20) cm-3. Through calibration of the beam flux we found that the incorporation of Sb was very near unity up to a concentration of approximately 5x10(19) cm-3. As-grown films are of good quality. However, furnace annealing was shown to improve the mobility and completely activate the Sb. Temperature dependent Hall measurements were used to further characterize the films.

引用

页码：76 / 78

页数：3

共 19 条

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