THE ELECTRICAL-PROPERTIES OF DOPED SILICON, GROWN BY MOLECULAR-BEAM-EPITAXY (MBE)

被引：17

作者：

KUBIAK, RAA

NEWSTEAD, SM

LEONG, WY

HOUGHTON, R

PARKER, EHC

机构：

[1] CITY LONDON POLYTECH, SIR JOHN CASS FAC PHYS SCI & TECHNOL, SOLID STATE MBE RES GRP, LONDON EC3N 2EY, ENGLAND

[2] PORTSMOUTH POLYTECH, DEPT APPL PHYS & PHYS ELECTR, PORTSMOUTH PO1 2DZ, HANTS, ENGLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 42卷 / 03期

关键词：

D O I：

10.1007/BF00620599

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：197 / 200

页数：4

相关论文

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