POTENTIAL-ENHANCED DOPING OF SI GROWN BY MOLECULAR-BEAM EPITAXY

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] Bean Jesse S, COMMUNICATION

[3] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[4] DAVITAYA FA, COMMUNICATION

[5] DOWSETT MG, COMMUNICATION

[6] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[7] Hamilton B., COMMUNICATION

[8] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1145 - 1146

[9] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613

[10] IYER SS, 1982, THESIS U CALIFORNIA

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] Bean Jesse S, COMMUNICATION

[3] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[4] DAVITAYA FA, COMMUNICATION

[5] DOWSETT MG, COMMUNICATION

[6] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[7] Hamilton B., COMMUNICATION

[8] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1145 - 1146

[9] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613

[10] IYER SS, 1982, THESIS U CALIFORNIA