POTENTIAL-ENHANCED DOPING OF SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

KUBIAK, RAA

LEONG, WY

PARKER, EHC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113656

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2738 / 2742

页数：5

共 30 条

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[15] P-TYPE DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF BORON [J].

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[16] ON BAKING A CRYOPUMPED UHV SYSTEM [J].

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[17]

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[18]

KUBIAK RAA, 1985, ELECTROCHEMICAL SOC, P169

[19]

KUBIAK RAA, 1985, ELECTROCHEMICAL SOC, P230

[20]

KUBIAK RAA, 1985, ELECTROCHEMICAL SOC, P124

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