LASER DESORPTION ON SI SURFACES BY USE OF MULTIPLE EXCIMER LASER-PULSES

被引：6

作者：

SCHLEMM, H

BUCHMANN, F

GEILER, HD

机构：

[1] Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, O- 6900 Jena

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90059-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Trains of temperature pulses generated by multiple excimer laser irradiation (KrF 248 nm; pulse length 25 ns) were used to realize the desorption of carbon and oxygen bonded on <100> Si surfaces. The effect of breaking bonds and desorption is analyzed by use of in-situ Auger electron spectroscopy (AES) as a function of the energy density and the number of applied laser pulses. Results will be presented for the laser-induced desorption of native oxides and specially prepared weak oxides on silicon surfaces.

引用

页码：298 / 301

页数：4

共 14 条

[1]

CALSON TA, 1974, PHOTOELECTRON AUGER

[2] A THERMAL DESCRIPTION OF THE MELTING OF C-SILICON AND A-SILICON UNDER PULSED EXCIMER LASERS [J].