HOLE TRAPS PRODUCED BY SWIFT HEAVY-ION IRRADIATION IN P-TYPE GERMANIUM

被引：7

作者：

MARIE, P

LEVALOIS, M

机构：

[1] Lermat, URA CNRS 1317, ISMRA, 14050 Caen Cedex

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 03期

关键词：

D O I：

10.1063/1.356329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lightly doped, p-type germanium has been irradiated at room temperature with swift heavy ions. Several hole traps, detected by means of deep level transient spectroscopy, have energies determined to be E(V)+0.22, E(V)+0.41, and EV+0.33 eV. The results are compared with those previously obtained for n-type germanium, and the defects are the same in the two kinds of materials: Divacancies and vacancies-impurity complexes.

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页码：1852 / 1854

页数：3

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