THEORY OF THE STEADY-STATE HOLE DRIFT VELOCITY IN INGAAS

被引：21

作者：

BRENNAN, K ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：995 / 997

页数：3

相关论文

共 23 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[3] HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS [J].

AHMED, SR ;

NAG, BR ;

ROY, MD .

SOLID-STATE ELECTRONICS, 1985, 28 (12) :1193-1197

[4] THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN GAAS AND INP [J].

BRENNAN, K ;

HESS, K .

PHYSICAL REVIEW B, 1984, 29 (10) :5581-5590

[5] THE P-N HETEROJUNCTION QUANTUM-WELL APD - A NEW HIGH-GAIN LOW-NOISE HIGH-SPEED PHOTODETECTOR SUITABLE FOR LIGHTWAVE COMMUNICATIONS AND DIGITAL APPLICATIONS [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :793-803

[6] THEORY OF THE GAINAS/ALINAS-DOPED QUANTUM-WELL APD - A NEW LOW-NOISE SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1683-1695

[7] THE P-N-JUNCTION QUANTUM-WELL APD - A NEW SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATIONS-SYSTEMS AND ON-CHIP DETECTOR APPLICATIONS [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :782-792

[8] THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN AL0.45GA0.55AS [J].

BRENNAN, K ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :964-966

[9] THEORY OF THE DOPED QUANTUM-WELL SUPERLATTICE APD - A NEW SOLID-STATE PHOTOMULTIPLIER [J].

BRENNAN, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (10) :1999-2016

[10] THEORETICAL-STUDY OF MULTIQUANTUM WELL AVALANCHE PHOTODIODES MADE FROM THE GAINAS ALINAS MATERIAL SYSTEM [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1502-1510