THEORY OF THE STEADY-STATE HOLE DRIFT VELOCITY IN INGAAS

被引:21
作者
BRENNAN, K [1 ]
机构
[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
关键词
D O I
10.1063/1.98787
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:995 / 997
页数:3
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共 23 条
[11]   OPTIMIZATION AND MODELING OF AVALANCHE PHOTODIODE STRUCTURES - APPLICATION TO A NEW CLASS OF SUPERLATTICE PHOTODETECTORS, THE P-I-N, P-N HOMOJUNCTION, AND P-N HETEROJUNCTION APDS [J].
BRENNAN, KF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1658-1669
[12]  
CAPASSO F, 1985, SEMICONDUCT SEMIMET, V22, P1
[13]   MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J].
CHANG, YC ;
TING, DZY ;
TANG, JY ;
HESS, K .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :76-78
[14]   SCATTERING PROBABILITIES FOR HOLES .2. POLAR OPTICAL SCATTERING MECHANISM [J].
COSTATO, M ;
REGGIANI, L .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 59 (01) :47-54
[15]  
COSTATO M, 1973, PHYS STATUS SOLIDI B, V58, P461
[17]   MEASUREMENT OF HOLE VELOCITY IN N-TYPE INGAAS [J].
HILL, P ;
SCHLAFER, J ;
POWAZINIK, W ;
URBAN, M ;
EICHEN, E ;
OLSHANSKY, R .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1260-1262
[18]   NOISE PROPERTIES AND TIME RESPONSE OF THE STAIRCASE AVALANCHE PHOTODIODE [J].
MATSUO, K ;
TEICH, MC ;
SALEH, BEA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2615-2623
[19]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+
[20]  
POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20