AN INVESTIGATION OF THE ENERGETICS AND DYNAMICS OF ADATOM MOTION TO DESCENDING-STEP EDGES IN PT/PT(111) HOMOEPITAXY

被引:27
作者
WANG, RP
FICHTHORN, KA
机构
[1] PENN STATE UNIV,DEPT CHEM ENGN,UNIV PK,PA 16802
[2] PENN STATE UNIV,DEPT PHYS,UNIV PK,PA 16802
基金
美国国家科学基金会;
关键词
D O I
10.1016/0039-6028(94)91305-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have performed semi-empirical molecular-dynamics simulations and static potential-energy,oy calculations to study kinetic mechanisms in Pt/Pt(111) homoepitaxy. Energy barriers for adatom incorporation into and minimum-potential-energy profiles for adatoms approaching the descending-step edges of small islands have been investigated. Adatoms incorporate into descending-step edges via a concerted exchange mechanism. The effects of island size and step-edge type on the incorporation kinetics have been studied and are found to be consistent with a recently proposed explanation for reentrant growth in Pt/Pt(111) homoepitaxy. Adatoms near the step edge have a significantly higher energy than those in the center of the island, due to decreasing coordination with the island atoms. From static-energy calculations, we find that energy barriers for an adatom to approach the descending-step edges do not differ considerably from the clean-surface diffusion barrier.
引用
收藏
页码:253 / 259
页数:7
相关论文
共 25 条
[1]   THE HOMOEPITAXIAL GROWTH OF PT ON PT(111) STUDIED WITH STM [J].
BOTT, M ;
MICHELY, T ;
COMSA, G .
SURFACE SCIENCE, 1992, 272 (1-3) :161-166
[2]   PT(111) RECONSTRUCTION INDUCED BY ENHANCED PT GAS-PHASE CHEMICAL-POTENTIAL [J].
BOTT, M ;
HOHAGE, M ;
MICHELY, T ;
COMSA, G .
PHYSICAL REVIEW LETTERS, 1993, 70 (10) :1489-1492
[3]   MOLECULAR-DYNAMICS SIMULATIONS OF ENERGY-FLOW AT A SOLID-SURFACE - NEW METHODS USING A SMALL NUMBER OF ATOMS [J].
DEPRISTO, AE ;
METIU, H .
JOURNAL OF CHEMICAL PHYSICS, 1989, 90 (02) :1229-1236
[4]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) OSCILLATIONS AT 77-K [J].
EGELHOFF, WF ;
JACOB, I .
PHYSICAL REVIEW LETTERS, 1989, 62 (08) :921-924
[5]   LOW-TEMPERATURE EPITAXIAL-GROWTH OF THIN METAL-FILMS [J].
EVANS, JW ;
SANDERS, DE ;
THIEL, PA ;
DEPRISTO, AE .
PHYSICAL REVIEW B, 1990, 41 (08) :5410-5413
[6]   FACTORS MEDIATING SMOOTHNESS IN EPITAXIAL THIN-FILM GROWTH [J].
EVANS, JW .
PHYSICAL REVIEW B, 1991, 43 (05) :3897-3905
[7]   TRANSITION FROM 2 TO 3 DIMENSIONS IN HOMOEPITAXIAL THIN-FILM GROWTH - THE EFFECT OF A REPULSIVE BARRIER AT DESCENDING STEPS [J].
FERRON, J .
PHYSICAL REVIEW B, 1992, 46 (16) :10457-10459
[8]   LATTICE STEPS AND ADATOM BINDING ON W(211) [J].
FINK, HW ;
EHRLICH, G .
SURFACE SCIENCE, 1984, 143 (01) :125-144
[9]   REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES [J].
KUNKEL, R ;
POELSEMA, B ;
VERHEIJ, LK ;
COMSA, G .
PHYSICAL REVIEW LETTERS, 1990, 65 (06) :733-736
[10]   EAM STUDY OF SURFACE SELF-DIFFUSION OF SINGLE ADATOMS OF FCC METALS NI, CU, AL, AG, AU, PD, AND PT [J].
LIU, CL ;
COHEN, JM ;
ADAMS, JB ;
VOTER, AF .
SURFACE SCIENCE, 1991, 253 (1-3) :334-344