CURRENT VOLTAGE CHARACTERISTICS OF ION-BEAM SYNTHESIZED COSI2/SI SCHOTTKY-BARRIER DIODES

被引：6

作者：

SPRAGGS, RS

PANANAKAKIS, G

BAUZA, D

REESON, KJ

SEALY, BJ

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,PHYS COMPOSANTS SEMICOND LAB,F-38016 GRENOBLE,FRANCE

[2] NAT HIST MUSEUM,DEPT MINERAL,LONDON SW7 5BD,ENGLAND

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 03期

关键词：

DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current/voltage characteristics of single crystal CoSi2 layers fabricated in (100)n-type silicon by high energy ion implantation have been investigated using mesa device structures prepared by wet chemical etching. The characteristics, measured at temperatures down to 100 K, are typical of Schottky barrier diodes. From the measurements the barrier height was found to be 0.64 +/- 0.01 eV. The ideality factor n (approximately 1.05 for T > 250 K) was found to increase as the temperature decreased suggesting that bulk recombination is taking place. The reverse breakdown voltage is found to vary but is in excess of 20 V.

引用

页码：296 / 298

页数：3

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