MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR, DIELECTRIC AND METAL-FILMS

被引：7

作者：

STENIN, SI

机构：

来源：

VACUUM | 1986年 / 36卷 / 7-9期

关键词：

D O I：

10.1016/0042-207X(86)90219-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：419 / 426

页数：8

共 63 条

[1]

ARKHIPENKO AV, 1985, POVERKHNOST FIZIKA K, P93

[2] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J].

BACHRACH, RZ ;

KRUSOR, BS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :756-764

[3]

BACHRACH RZ, 1980, CRYSTAL GROWTH, P1

[4] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[5] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J].

BEAN, JC ;

SADOWSKI, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :137-142

[6]

BEAN JC, 1981, 1981 INT EL DEV M, P6

[7]

BEAN JC, 1981, IMPURITY DOPING, P177

[8] EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE [J].

CHANG, CA ;

SERRANO, CM ;

CHANG, LL ;

ESAKI, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02) :603-605

[9] INTERFACE MORPHOLOGY STUDIES OF(110)AND(111)GE-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, CA .

APPLIED PHYSICS LETTERS, 1982, 40 (12) :1037-1039

[10] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY [J].

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1253-1255

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