ELECTROMIGRATION OF SILICON AND PHOSPHORUS IN TANTALUM POLYCIDE INTERCONNECTIONS

被引：2

作者：

HASSE, W

SCHULTE, J

GRAUL, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：659 / 663

页数：5

共 11 条

[1]

d'Heurle F. M., 1978, THIN FILMS INTERDIFF

[2]

EINSPRUCH NG, 1983, VLSI ELECTRONICS MIC, V6

[3]

GEIER HJ, 1974, THESIS U FLORIDA

[4]

GHATE PB, 1982, THIN SOLID FILMS, V93, P359, DOI 10.1016/0040-6090(82)90143-2

[5] ELECTRONIC TRANSPORT-PROPERTIES OF TANTALUM DISILICIDE THIN-FILMS [J].

HUANG, MT ;

MARTIN, TL ;

MALHOTRA, V ;

MAHAN, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :836-845

[6]

Lloyd J. R., 1983, 21st Annual Proceedings on Reliability Physics 1983, P198, DOI 10.1109/IRPS.1983.361984

[7] INTERFACIAL ELECTROMIGRATION OF ALUMINUM IN THIN-FILM POLYSILICON SILICIDE STRUCTURES [J].

LLOYD, JR ;

SULLIVAN, MJ ;

JOZWIAK, JL ;

MURPHY, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :68-70

[8] OBSERVATION OF ELECTROMIGRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON THIN-FILMS [J].

LLOYD, JR ;

POLCARI, MR ;

MACKENZIE, GA .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :428-430

[9] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[10] EFFECT OF SCALING OF INTERCONNECTIONS ON THE TIME-DELAY OF VLSI CIRCUITS [J].

SARASWAT, KC ;

MOHAMMADI, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :645-650

← 1 2 →