RAMAN AND POINT CONTACT CURRENT VOLTAGE CHARACTERIZATION OF LASER-INDUCED DIFFUSION IN GAAS

被引：8

作者：

JIMENEZ, J ^{[1
]}

MARTIN, E ^{[1
]}

GARCIA, BJ ^{[1
]}

PIQUERAS, J ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,SEMICOND LAB,E-28049 MADRID,SPAIN

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 55卷 / 06期

关键词：

D O I：

10.1007/BF00331675

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman scattering and point contact current-voltage (PCIV) measurements were used as characterization tools of tin-diffused GaAs layers. Diffusion was induced by irradiating GaAs substrates covered with thin tin layers single pulses of a ruby laser. Samples processed with the lowest energies show strong damage and incomplete electrical activation as deduced from Raman and PCIV measurements, respectively. Raman microprobe in depth analysis and PCIV profiles also suggest the presence of a damaged region with incomplete electrical activation at the boundary between the molten layer and the solid substrate.

引用

页码：566 / 572

页数：7

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