A SIMPLE INTERFACIAL-LAYER MODEL FOR THE NONIDEAL IV AND C-V CHARACTERISTICS OF THE SCHOTTKY-BARRIER DIODE

被引：97

作者：

TSENG, HH

WU, CY

机构：

[1] Natl Chiao Tung Univ, Hsin Chu, Taiwan, Natl Chiao Tung Univ, Hsin Chu, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 04期

关键词：

Acknowledgements-The authors would like to express their sincere thanks to ERSO; ITRl’and National Science Council; Taiwan; Republic of China; for grant support;

D O I：

10.1016/0038-1101(87)90166-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：383 / 390

页数：8

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