OPTICAL ANALYSIS OF HOT CARRIER DISTRIBUTION AND TRANSPORT-PROPERTIES IN INP ALLNAS TYPE-II HETEROSTRUCTURES

被引：6

作者：

SAKAMOTO, R ^{[1
]}

KOHNO, T ^{[1
]}

KAMIYOSHI, T ^{[1
]}

INOUE, M ^{[1
]}

NAKAJIMA, S ^{[1
]}

HAYASHI, H ^{[1
]}

机构：

[1] SUMITOMO ELECT IND LTD,OPTOELECTR R&D LABS,SAKAE KU,YOKOHAMA 244,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report optical analysis of hot carrier distribution and transport properties in InP/AllnAs type II heterostructures under electric fields applied both normal and parallel to the heterointerface. We have observed photoluminescence which originates from the transition between electrons and holes spatially separated in the InP and AllnAs, respectively. An applied electric field across the heterointerface has significantly modulated the photoluminescence spectrum emitted from the interface. This effect can be interpreted from the field-dependent modulation of the carrier distributions near the interface in the staggered heterostructure. The hot electron velocity of 2D electrons in the heterostructures has been also discussed in experimental and theoretical aspects.

引用

页码：B271 / B273

页数：3

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