TWO-DIMENSIONAL MAGNETO-TRANSPORT IN A NEW TYPE OF HETEROSTRUCTURE, INP/N-ALINAS

被引：8

作者：

INOUE, M ^{[1
]}

NAKAJIMA, S ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 11期

关键词：

D O I：

10.1016/0038-1098(84)90280-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1023 / 1025

页数：3

共 16 条

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[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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STORMER, HL
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[3] Hida H., 1982, Technology Reports of the Osaka University, V32, P285
[4] INOUE M, 1982, J APPL PHYS JAPAN, V2, P357
[5] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
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DINGLE, R
CHENG, KY
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
[6] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN
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OKAMURA, M
[J]. ELECTRONICS LETTERS, 1979, 15 (16) : 502 - 504
[7] MICROWAVE INP-SIO2 MISFET
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LILE, DL
CLAWSON, AR
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 494 - 495
[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
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HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[9] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED AL0.48IN0.52AS ON INP
NAKAJIMA, K
TANAHASHI, T
AKITA, K
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 194 - 196
[10] QUANTUM OSCILLATIONS AT A GA0.47IN0.53AS-INP HETEROJUNCTION INTERFACE
NICHOLAS, RJ
BRUMMELL, MA
PORTAL, JC
RAZEGHI, M
POISSON, MA
[J]. SOLID STATE COMMUNICATIONS, 1982, 43 (11) : 825 - 828

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