HIGH ELECTRON-MOBILITY IN MODULATION-DOPED N-ALINAS/INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：4

作者：

NAKAJIMA, S

MURATA, M

SHIGA, N

HAYASHI, H

INOUE, M

机构：

[1] Optoelectronics R and D Laboratories, Sumitomo Electric Industries, Ltd., Sakae-ku, Yokohama 244

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high electron mobility in modulation-doped n-AlInAs/InP heterostructures. The electron mobility in these heterostructures was observed to be 48 500 cm2/V s with electron concentration of 8.1 X 10(11)/cm2 at 50 K. Shubnikov-de Hass measurement clearly shows the existence of two dimensional electron gas in this heterostructure. We also observed small light sensitivity and no persistent photoconductivity in this heterostructure, both of which are due to an AlInAs layer which is free of DX centers in an AlInAs and high quality heterointerface grown by low pressure organometallic vapor phase epitaxy.

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页码：1606 / 1607

页数：2

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