GRADED-BASE SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION WITH NEAR-IDEAL ELECTRICAL CHARACTERISTICS

被引：31

作者：

STURM, JC ^{[1
]}

PRINZ, EJ ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] EVANS E INC,PLAINSBORO,NJ

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.82068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graded-base and uniform base Si/Si1-(x)Ge(x)/Si heterojunction bipolar transistors with near-ideal base and collector currents have been fabricated by rapid thermal chemical vapor deposition (RTCVD). The temperature dependences of the collector currents are shown to obey a simple analytical model that can be applied to devices which have arbitrary base profiles. The base currents are independent of base composition, and current gains in excess of 11 000 have been observed at 133 K.

引用

页码：303 / 306

页数：4

共 12 条

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