INFRARED-SPECTRUM OF OXYGEN IN SILICON

被引：8

作者：

OATES, AS ^{[1
]}

STAVOLA, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.337814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3114 / 3116

页数：3

共 10 条

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[3]

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[4] THE EFFECT OF METALLIC CONTAMINATION ON ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW-TEMPERATURES [J].

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[5]

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NORWICK AS, 1963, ADV PHYS, V12, P251

[7]

Pajot B., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P39

[8] QUANTITATIVE SPECTROSCOPY OF INTERSTITIAL OXYGEN IN SILICON [J].

PAJOT, B ;

STEIN, HJ ;

CALES, B ;

NAUD, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) :3034-3037

[9] DIFFUSIVITY OF OXYGEN IN SILICON AT THE DONOR FORMATION TEMPERATURE [J].

STAVOLA, M ;

PATEL, JR ;

KIMERLING, LC ;

FREELAND, PE .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :73-75

[10] INFRARED-SPECTRUM OF INTERSTITIAL OXYGEN IN SILICON [J].

STAVOLA, M .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :514-516

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