QUANTITATIVE SPECTROSCOPY OF INTERSTITIAL OXYGEN IN SILICON

被引：56

作者：

PAJOT, B

STEIN, HJ

CALES, B

NAUD, C

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] CNRS,CNRS CTR RECH PHYS HAUTES TEMP,F-45045 ORLEANS,FRANCE

[3] UNIV PARIS 06,OPT MAT CONDENSEE,F-75230 PARIS 05,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期

关键词：

D O I：

10.1149/1.2113717

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3034 / 3037

页数：4

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