EQUILIBRIUM AND NONEQUILIBRIUM GAP STATE DISTRIBUTION IN A-SI-H

被引：24

作者：

SCHUMM, G

BAUER, GH

机构：

[1] Inst. für Physikalische Elektronik, Universität Stuttgart, D-7000 Stuttgart 80

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80119-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Based on weak-bond to dangling-bond conversion, a complete quantitative solution for the gap state distribution in a-Si:H under general non-equilibrium conditions is presented. In this picture the DOS profile is, apart from basic structural bounds given by the Gaussian spread of available defect energies, completely determined by free carrier concentrations and the resulting occupation functions in the gap. All metastable changes in the gap state density and distribution can be quantitatively explained by deviations of free carrier concentrations under the respective non-equilibrium conditions.

引用

页码：315 / 318

页数：4

共 14 条

[1] SOLUTION OF THE MU-TAU PROBLEM IN A-SI-H [J].

KOCKA, J ;

NEBEL, CE ;

ABEL, CD .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :221-246

[2] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON [J].

MULLER, G ;

KALBITZER, S ;

MANNSPERGER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (04) :243-250

[3] ON THE MECHANISM OF DOPING AND DEFECT FORMATION IN A-SI-H [J].

PIERZ, K ;

FUHS, W ;

MELL, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :123-141

[4]

SCHUMM G, 1990, MATER RES SOC SYMP P, V192, P189, DOI 10.1557/PROC-192-189

[5] SPATIALLY RESOLVED AND ENERGY-RESOLVED DEFECT KINETICS IN ALPHA-SI-H - A COMPREHENSIVE STUDY BY PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENTS [J].

SCHUMM, G ;

BAUER, GH .

PHYSICAL REVIEW B, 1989, 39 (08) :5311-5326

[6] DEFECT STRUCTURE AND STABILITY OF A-SI-H BY MODULATED PHOTOCURRENT STUDIES [J].

SCHUMM, G ;

BAUER, GH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :660-662

[7]

SCHUMM G, 1991, IN PRESS PHIL MAG B

[8] KINETICS OF THE GENERATION AND ANNEALING OF DEEP DEFECTS AND RECOMBINATION CENTERS IN AMORPHOUS-SILICON [J].

SHEPARD, K ;

SMITH, ZE ;

ALJISHI, S ;

WAGNER, S .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1644-1646

[9] NATURE OF LOCALIZED STATES IN HYDROGENATED SI-BASED AMORPHOUS-SEMICONDUCTOR FILMS ELUCIDATED FROM LESR AND CPM [J].

SHIMIZU, T ;

KIDOH, H ;

MORIMOTO, A ;

KUMEDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (04) :586-592

[10] THERMAL GENERATION CURRENTS IN HYDROGENATED AMORPHOUS-SILICON P-I-N STRUCTURES [J].

STREET, RA .

APPLIED PHYSICS LETTERS, 1990, 57 (13) :1334-1336

← 1 2 →