SPATIALLY RESOLVED AND ENERGY-RESOLVED DEFECT KINETICS IN ALPHA-SI-H - A COMPREHENSIVE STUDY BY PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENTS

被引：62

作者：

SCHUMM, G

BAUER, GH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5311 / 5326

页数：16

共 46 条

[1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].

ADLER, D .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14

[2] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].

ADLER, D .

SOLAR CELLS, 1983, 9 (1-2) :133-148

[3] DANGLING BOND IN A SI-H [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2203-2206

[4]

BARYAM Y, 1987, MATER RES SOC S P, V95, P3

[5]

Boer K. W., 1961, PHYS STATUS SOLIDI, V1, P275, DOI 10.1002/pssb.19610010402

[6] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[7] DETERMINATION OF THE RECOMBINATION RATE CONSTANTS IN AMORPHOUS-SILICON FROM DOUBLE-INJECTION EXPERIMENTS [J].

DOGHMANE, A ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (06) :463-475

[8] DEFECT STATES IN AMORPHOUS SILICON [J].

ELLIOTT, SR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :325-334

[9] ACTIVATED TRANSPORT IN AMORPHOUS-SEMICONDUCTORS .2. INTERPRETATION OF EXPERIMENTAL-DATA [J].

FENZ, P ;

MULLER, H ;

OVERHOF, H ;

THOMAS, P .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (16) :3191-3199

[10] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

GOODMAN, NB ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165

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