DEFECT STRUCTURE AND STABILITY OF A-SI-H BY MODULATED PHOTOCURRENT STUDIES

被引:8
作者
SCHUMM, G
BAUER, GH
机构
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D O I
10.1016/0022-3093(89)90682-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:660 / 662
页数:3
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共 12 条
[1]   STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J].
BARYAM, Y ;
ADLER, D ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1986, 57 (04) :467-470
[2]  
ESICK JM, IN PRESS MRS S P, V149
[3]   STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].
HAN, D ;
FRITZSCHE, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400
[4]   OBSERVATION OF A REVERSIBLE FIELD-INDUCED DOPING EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1982, 48 (06) :421-424
[5]   THE ENERGY OF THE DANGLING-BOND STATES IN A-SI [J].
LECOMBER, PG ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01) :L1-L7
[6]   DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J].
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1986, 57 (23) :2979-2982
[7]   SPATIALLY RESOLVED AND ENERGY-RESOLVED DEFECT KINETICS IN ALPHA-SI-H - A COMPREHENSIVE STUDY BY PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENTS [J].
SCHUMM, G ;
BAUER, GH .
PHYSICAL REVIEW B, 1989, 39 (08) :5311-5326
[8]  
SCHUMM G, IN PRESS MRS S P, V149
[9]   THERMAL-EQUILIBRIUM DEFECT PROCESSES IN HYDROGENATED AMORPHOUS-SILICON [J].
SMITH, ZE ;
ALJISHI, S ;
SLOBODIN, D ;
CHU, V ;
WAGNER, S ;
LENAHAN, PM ;
ARYA, RR ;
BENNETT, MS .
PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2450-2453
[10]   BIAS ANNEALING OF DOPED AMORPHOUS-SILICON [J].
STREET, RA ;
KAKALIOS, J .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01) :L21-L26