INFLUENCE OF HEAT-TREATMENT ON ALUMINUM-OXIDE FILMS ON SILICON

被引:10
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KAMOSHID.M
MAYER, JW
MITCHELL, IV
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D O I
10.1063/1.1661386
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O59 [应用物理学];
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页码:1717 / &
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共 16 条
[1]  
ATALLA MM, PROPERTIES ELEMENTAL
[2]  
BENJAMINI EA, 1963, M ELECTROCHEMICAL SO
[3]  
DOO VY, 1969, 15 M EL SOC NEW YORK
[4]  
GATOS H, 1960, SEMICONDUCTORS, V5, P163
[5]  
GROVE AS, 1967, PHYS TECHNOL S, P23
[6]   EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS [J].
GYULAI, J ;
MEYER, O ;
MAYER, JW ;
RODRIGUEZ, V .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :451-+
[7]   ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].
GYULAI, J ;
MEYER, O ;
MAYER, JW ;
RODRIGUE.V .
APPLIED PHYSICS LETTERS, 1970, 16 (06) :232-&
[8]   INFLUENCE OF DEPOSITION TEMPERATURE ON PROPERTIES OF HYDROLYTICALLY GROWN ALUMINUM OXIDE FILMS [J].
KAMOSHIDA, M ;
MITCHELL, IV ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1971, 18 (07) :292-+
[9]  
KAMOSHIDA M, 1971, APPL PHYS LETT, V19, P21, DOI 10.1063/1.1653728
[10]   THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].
LIGENZA, JR ;
SPITZER, WG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :131-136