INFLUENCE OF DEPOSITION TEMPERATURE ON PROPERTIES OF HYDROLYTICALLY GROWN ALUMINUM OXIDE FILMS

被引：23

作者：

KAMOSHIDA, M

MITCHELL, IV

MAYER, JW

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 07期

关键词：

D O I：

10.1063/1.1653670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：292 / +

页数：1

共 7 条

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[4]

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1970, SC 5 (05) :203-&

[6] PROPERTIES OF ALUMINUM OXIDE OBTAINED BY HYDROLYSIS OF AICI3 [J].

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IKUSHIMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :703-+

[7] AL2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS [J].

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APPLIED PHYSICS LETTERS, 1968, 12 (03) :109-+

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