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- [1] ILLUSTRATION OF THE LINEAR-MUFFIN-TIN-ORBITAL TIGHT-BINDING REPRESENTATION - COMPACT ORBITALS AND CHARGE-DENSITY IN SI[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5253 - 5269ANDERSEN, OKPAWLOWSKA, ZJEPSEN, O
- [2] DIHEDRAL-ANGLE-AVERAGED BETHE LATTICE FOR VIBRATIONS IN GLASSES[J]. PHYSICAL REVIEW B, 1985, 31 (12) : 7779 - 7787BARRIO, RAGALEENER, FLMARTINEZ, E
- [3] NON-EMPIRICAL PSEUDOPOTENTIALS FOR MOLECULAR CALCULATIONS .1. PSIBMOL ALGORITHM AND TEST CALCULATIONS[J]. MOLECULAR PHYSICS, 1977, 33 (01) : 159 - 180BARTHELAT, JCDURAND, PSERAFINI, A
- [4] IDENTIFICATION OF CHALCOGEN POINT-DEFECT SITES IN SILICON BY TOTAL-ENERGY CALCULATIONS[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (23) : 2525 - 2528BEELER, FSCHEFFLER, MJEPSEN, OGUNNARSSON, O
- [5] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +BOSOMWORTH, DRHAYES, WSPRAY, ARLWATKINS, GD
- [6] ELECTRON-STATES IN ALPHA-QUARTZ - SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION[J]. PHYSICAL REVIEW B, 1977, 15 (08): : 4020 - 4029CHELIKOWSKY, JRSCHLUTER, M
- [7] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &CORBETT, JWMCDONALD, RSWATKINS, GD
- [8] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &CORBETT, JWWATKINS, GDCHRENKO, RMMCDONALD, RS
- [9] THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN AND OXYGEN[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3193 - 3207DELEO, GGFOWLER, WBWATKINS, GD
- [10] EXACT-EXCHANGE HARTREE-FOCK CALCULATIONS FOR PERIODIC-SYSTEMS .5. GROUND-STATE PROPERTIES OF SILICON[J]. PHYSICAL REVIEW B, 1981, 24 (08) : 4177 - 4183DOVESI, RCAUSA, MANGONOA, G