BARRIER HEIGHT LOWERING OF SCHOTTKY CONTACTS ON ALINAS LAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION

被引：19

作者：

FUJITA, S

NARITSUKA, S

NODA, T

WAGAI, A

ASHIZAWA, Y

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 03期

关键词：

D O I：

10.1063/1.353245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky characteristics of undoped AlInAs grown by metal-organic chemical-vapor deposition have been investigated. I-V characteristics and their dependence on donor concentrations in AlInAs layers were explained well by assuming the existence of an interfacial layer. The presence of oxygen atoms at the metal-AlInAs interface was revealed by Auger electron spectroscopy measurements. The oxide formation on AlInAs surface may be an inevitable result because of the high composition of aluminum atoms in AlInAs. Reduction in donor concentration in AlInAs layers is effective in minimizing the influence of the interfacial layer on barrier height lowering. Reduction in gate leakage current was successfully demonstrated for fabricated GaInAs/AlInAs high-electron-mobility transistors by reducing donor concentration in AlInAs Schottky layers.

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页码：1284 / 1287

页数：4

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