ATOMIC INCORPORATION EFFICIENCIES FOR STRAINED (GAIN)AS/GA(PAS) SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：25

作者：

LUTGEN, S

MARSCHNER, T

STOLZ, W

GOBEL, EO

TAPFER, L

机构：

[1] UNIV MARBURG,CTR MAT SCI,D-35032 MARBURG,GERMANY

[2] UNIV MARBURG,DEPT PHYS,D-35032 MARBURG,GERMANY

[3] CNRSM,I-72100 BRINDISI,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 152卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00060-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Symmetrically strained (GaIn)As/Ga(PAs) superlattice (symm. SLS) structures have been grown by metalorganic vapour phase epitaxy on (100) GaAs substrate and analyzed by high-resolution X-ray diffraction (XRD) investigations. These studies reveal the high crystalline perfection with respect to small fluctuations in strain and individual layer thicknesses of the 50 period symm. SLS structures, having a total thickness of 1 mu m. Dynamical XRD theory has been applied to evaluate the precise values of thicknesses and incorporated concentrations in the respective strained ternary layers. The strain-induced reduction in In-incorporation is determined quantitatively for the compressive strained (GaIn)As layer. The P-incorporation rate and the growth efficiency of the tensile strained Ga(PAs) layer is experimentally evaluated and discussed in conjunction with theoretical incorporation models.

引用

收藏

页码：1 / 13

页数：13

相关论文

共 29 条

[1] USE OF TERTIARY-BUTYLPHOSPHINE FOR THE GROWTH OF INP AND GAAS1-XPX [J].

CHEN, CH ;

CAO, DS ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (01) :67-73

[2] GROWTH OF STRAIN-BALANCED INASP/INGAP SUPERLATTICES FOR 1.06 MU-M OPTICAL MODULATORS [J].

CHIU, TH ;

CUNNINGHAM, JE ;

WOODWARD, TK ;

SIZER, T .

APPLIED PHYSICS LETTERS, 1993, 62 (04) :340-342

[3] PSEUDOMORPHIC INGAAS-GAASP QUANTUM-WELL MODULATORS ON GAAS [J].

CUNNINGHAM, JE ;

GOOSSEN, KW ;

WILLIAMS, M ;

JAN, WY .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :727-729

[4] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF ALTERNATED TENSILE COMPRESSIVE STRAINED GAINASP MULTIPLE-QUANTUM WELLS EMITTING AT 1.5 MU-M [J].

EMERY, JY ;

STARCK, C ;

GOLDSTEIN, L ;

PONCHET, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :241-245

[5] A METHOD FOR DOSING SOLID SOURCES FOR MOVPE - EXCELLENT REPRODUCIBILITY OF DOSIMETRY FROM A SATURATED SOLUTION OF TRIMETHYLINDIUM [J].

FRIGO, DM ;

VANBERKEL, WW ;

MAASSEN, WAH ;

VANMIER, GPM ;

WILKIE, JH ;

GAL, AW .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :99-105

[6] SURFACE SCIENCE AT ATMOSPHERIC-PRESSURE - RECONSTRUCTIONS ON (001) GAAS IN ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

KAMIYA, I ;

ASPNES, DE ;

TANAKA, H ;

FLOREZ, LT ;

HARBISON, JP ;

BHAT, R .

PHYSICAL REVIEW LETTERS, 1992, 68 (05) :627-630

[7] GROWTH AND CHARACTERIZATION OF INGAAS GAASP STRAINED LAYER SUPERLATTICES [J].

KATSUYAMA, T ;

BEDAIR, SM ;

GILES, NC ;

BURNS, RP ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :498-502

[8] GROWTH AND CHARACTERIZATION OF STRAINED LAYERS OF GAASXP1-X [J].

LEYS, MR ;

TITZE, H ;

SAMUELSON, L ;

PETRUZZELLO, J .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :504-511

[9] THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAS1-Y GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY [J].

LUDOWISE, MJ ;

DIETZE, WT .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :59-73

[10] METAL-ORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF SYMMETRICALLY STRAINED (GAIN)AS/GA(PAS) SUPERLATTICES [J].

LUTGEN, S ;

MARSCHNER, T ;

ALBRECHT, TF ;

STOLZ, W ;

GOBEL, EO ;

TAPFER, L .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3) :249-252