ATOMIC INCORPORATION EFFICIENCIES FOR STRAINED (GAIN)AS/GA(PAS) SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引:25
作者
LUTGEN, S
MARSCHNER, T
STOLZ, W
GOBEL, EO
TAPFER, L
机构
[1] UNIV MARBURG,CTR MAT SCI,D-35032 MARBURG,GERMANY
[2] UNIV MARBURG,DEPT PHYS,D-35032 MARBURG,GERMANY
[3] CNRSM,I-72100 BRINDISI,ITALY
关键词
D O I
10.1016/0022-0248(95)00060-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Symmetrically strained (GaIn)As/Ga(PAs) superlattice (symm. SLS) structures have been grown by metalorganic vapour phase epitaxy on (100) GaAs substrate and analyzed by high-resolution X-ray diffraction (XRD) investigations. These studies reveal the high crystalline perfection with respect to small fluctuations in strain and individual layer thicknesses of the 50 period symm. SLS structures, having a total thickness of 1 mu m. Dynamical XRD theory has been applied to evaluate the precise values of thicknesses and incorporated concentrations in the respective strained ternary layers. The strain-induced reduction in In-incorporation is determined quantitatively for the compressive strained (GaIn)As layer. The P-incorporation rate and the growth efficiency of the tensile strained Ga(PAs) layer is experimentally evaluated and discussed in conjunction with theoretical incorporation models.
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页码:1 / 13
页数:13
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