GROWTH AND CHARACTERIZATION OF INGAAS GAASP STRAINED LAYER SUPERLATTICES

被引：17

作者：

KATSUYAMA, T ^{[1
]}

BEDAIR, SM ^{[1
]}

GILES, NC ^{[1
]}

BURNS, RP ^{[1
]}

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：498 / 502

页数：5

共 24 条

[1] HIGH-EFFICIENCY CARRIER COLLECTION AND STIMULATED-EMISSION IN THIN (50 A) PSEUDOMORPHIC INXGA1-XAS QUANTUM-WELLS [J].

ANDERSON, NG ;

LO, YC ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :758-760

[2] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].

ANDERSON, NG ;

LAIDIG, WD ;

LIN, YF .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) :187-202

[3] DEFECT REDUCTION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING DIFFERENT SUPERLATTICE STRUCTURES [J].

BEDAIR, SM ;

HUMPHREYS, TP ;

ELMASRY, NA ;

LO, Y ;

HAMAGUCHI, N ;

LAMP, CD ;

TUTTLE, AA ;

DREIFUS, DL ;

RUSSELL, P .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :942-944

[4] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE [J].

BEDAIR, SM ;

KATSUYAMA, T ;

TIMMONS, M ;

TISCHLER, MA .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :45-47

[5] GAASP-GAINASSB SUPERLATTICES - A NEW STRUCTURE FOR ELECTRONIC DEVICES [J].

BEDAIR, SM ;

KATSUYAMA, T ;

CHIANG, PK ;

ELMASRY, NA ;

TISCHLER, M ;

TIMMONS, M .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :477-482

[6] THE USE OF METALORGANIC CHEMICAL VAPOR-DEPOSITION TO PREPARE DEVICE QUALITY GA(ASP) STRAINED-LAYER SUPERLATTICES [J].

BIEFELD, RM .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (04) :193-199

[7]

BIEFELD RM, 1983, J ELECTRON MATER, V12, P903, DOI 10.1007/BF02655302

[8] VAPOR GROWTH OF A SEMICONDUCTOR SUPERLATTICE [J].

BLAKESLE.AE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1459-&

[9] (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD [J].

FUKUI, T ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L521-L523

[10] DETERMINATION OF THE MICROSCOPIC QUALITY OF INGAAS-INALAS INTERFACES BY PHOTOLUMINESCENCE - ROLE OF INTERRUPTED MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

JUANG, FY ;

BHATTACHARYA, PK ;

SINGH, J .

APPLIED PHYSICS LETTERS, 1986, 48 (04) :290-292

← 1 2 3 →