PROPERTIES AND DESIGN THEORY OF ULTRAFAST GAAS METAL-SEMICONDUCTOR METAL PHOTODETECTOR WITH SYMMETRICAL SCHOTTKY CONTACTS

被引：39

作者：

NAKAJIMA, K

IIDA, T

SUGIMOTO, K

KAN, H

MIZUSHIMA, Y

机构：

[1] Hamamatsu Photonics, 1126-1, Ichino-cho, Hamamatsu

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 01期

关键词：

D O I：

10.1109/16.43797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs metal-semiconductor-metal photodetector (MSM-PD), which is fabricated in a symmetrical and interdigital Schottky contact structure and simply disposed on a semi-insulating GaAs substrate, has been studied. The device has characteristics of a high-speed response and a very low dark current, even with a moderate size (200 μm)2. Ultrafast responsivity is due to high drift velocity of the photoelectrons and low capacitance. Based on the experimental data, a design theory is described for an optimum performance to show an importance of compromise between the circuit time constant and the transit time. © 1990 IEEE

引用

页码：31 / 35

页数：5

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