DIFFUSION OF SI IN THIN COSI2 LAYERS

被引：5

作者：

SCHOWENGERDT, FD ^{[1
]}

LIN, TL ^{[1
]}

FATHAUER, RW ^{[1
]}

GRUNTHANER, PJ ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期

关键词：

D O I：

10.1063/1.101399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1314 / 1316

页数：3

共 10 条

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[4] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111) [J].

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[5]

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[6] SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111) [J].

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[7] SI-31 TRACER STUDIES OF THE OXIDATION OF SI, COSI2, AND PTSI [J].

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[8]

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[9] CONTROL OF PINHOLES IN EPITAXIAL COSI2 LAYERS ON SI(111) [J].

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BATSTONE, JL .

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[10]

TUNG RT, 1987, MATER RES SOC S P, V94, P65

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