PREPARATION AND CHARACTERIZATION OF THIN-FILMS OF MGO, AL2O3 AND MGAL2O4 BY ATOMIC LAYER DEPOSITION

被引：36

作者：

HUANG, R ^{[1
]}

KITAI, AH ^{[1
]}

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS & MAT SCI & ENGN,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 02期

关键词：

ATOMIC LAYER DEPOSITION; MGO; AL2O3; MGAL2O4; THIN FILMS;

D O I：

10.1007/BF02665029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MgO, Al2O3 and MgAl2O4 thin films were deposited on silicon substrates at various temperatures by the atomic layer deposition (ALD) method using bis(cyclopentadienyl)magnesium, triethylaluminum, and H2O and were characterized systematically. High-quality polycrystalline MgO films were deposited for a substrate temperature above 500-degrees-C, and amorphous thin films were deposited around 400-degrees-C. The deposited Al2O3 and MgAl2O4 thin films were characterized as amorphous in structure. Applicability of ALD to complex oxides is discussed.

引用

页码：215 / 220

页数：6

共 29 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :948-&

[2]

ABOELFOTOH MO, 1975, J VAC SCI TECHNOL, V12, P67, DOI 10.1116/1.568622

[3] MN-2+ AS A POTENTIAL SOLID-STATE LASER ION [J].

CLAUSEN, R ;

PETERMANN, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (06) :1114-1117

[4] THIN-FILM MGAL2O4MN SPINEL PHOSPHOR [J].

DALACU, N ;

KITAI, AH ;

SANDERS, BW ;

HUANG, R .

THIN SOLID FILMS, 1992, 209 (02) :207-210

[5] PREPARATION AND CHARACTERIZATION OF MGO THIN-FILMS DEPOSITED BY SPRAY PYROLYSIS OF MG(2,4-PENTANEDIONATE)2 [J].

DESISTO, WJ ;

HENRY, RL .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :314-317

[6] GROWTH STRUCTURES OF MGO FILMS ON SI(100) AND SI(111) SURFACES [J].

DURUSOY, HZ .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (17) :1023-1025

[7] EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION [J].

FORK, DK ;

FENNER, DB ;

CONNELL, GAN ;

PHILLIPS, JM ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1990, 57 (11) :1137-1139

[8] GROWTH OF EPITAXIAL PRO2 THIN-FILMS ON HYDROGEN TERMINATED SI (111) BY PULSED LASER DEPOSITION [J].

FORK, DK ;

FENNER, DB ;

GEBALLE, TH .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4316-4318

[9]

FORK DK, 1991, APPL PHYS LETT, V58, P2295

[10] HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON [J].

FUKUMOTO, H ;

IMURA, T ;

OSAKA, Y .

APPLIED PHYSICS LETTERS, 1989, 55 (04) :360-361

← 1 2 3 →