CO2-LASER ANNEALING CHARACTERISTICS OF HIGH-DOSE BORON-IMPLANTED AND ARSENIC-IMPLANTED SILICON

被引：8

作者：

TSIEN, PH ^{[1
]}

GOTZLICH, J ^{[1
]}

RYSSEL, H ^{[1
]}

RUGE, I ^{[1
]}

机构：

[1] FRAUNHOFER INST FESTKORPERTECHNOL,D-8000 MUNCHEN 60,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：663 / 668

页数：6

共 18 条

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[10] FURNACE ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED, LASER ANNEALED SILICON [J].

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