ENERGY-DEPENDENCE OF DEFECT ENERGY-LEVELS IN ELECTRON-IRRADIATED SILICON

被引：18

作者：

KRYNICKI, J

BOURGOIN, JC

VASSAL, G

机构：

[1] UNIV PARIS 7, ECOLE NORM SUPER, PHYS SOLIDES GRP, CNRS LAB, F-75221 PARIS 05, FRANCE

[2] RECH ALSTHOM ATLANTIQUE, F-91301 MASSY, FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 03期

关键词：

D O I：

10.1051/rphysap:01979001403048100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：481 / 484

页数：4

共 16 条

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[4]

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[7] ELECTRON-IRRADIATION DAMAGE IN ANTIMONY-DOPED SILICON [J].

EVWARAYE, AO .

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[8] ROLE OF OXYGEN IN IRRADIATED ARSENIC-DOPED SILICON [J].

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[10] SIMPLE SIGNAL ANALYZER FOR DEEP-LEVEL TRAP SPECTROSCOPY [J].

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JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (10) :1016-1018

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