NANOMETER-SCALE PATTERNING OF SILICON (100) SURFACES BY AN ATOMIC-FORCE MICROSCOPE OPERATING IN AIR

被引：59

作者：

TSAU, LM

WANG, DW

WANG, KL

机构：

[1] Device Research Laboratory, Department of Electrical Engineering, University of California at Los Angeles, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期

关键词：

D O I：

10.1063/1.111707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modification on silicon (100) surfaces was demonstrated by using an atomic force microscope operating in air. Field-enhanced oxidation on silicon surfaces with protection oxide was done locally by biasing a p-type heavily doped silicon tip between -3 and -10 V. Oxide lines of width as small as approximately 10 nm were achieved. After a dip in aqueous HF solution, the oxide was etched away; the modification depth, approximately 1 nm, was characterized by the same atomic force microscope. Other field induced reactions for patterning are possible.

引用

页码：2133 / 2135

页数：3

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