OPERATION AND RADIATION-RESISTANCE OF A FOXFET BIASING STRUCTURE FOR SILICON STRIP DETECTORS

被引：24

作者：

LAAKSO, M

SINGH, P

ENGELS, E

SHEPARD, PF

机构：

[1] RES INST HIGH ENERGY PHYS,HELSINKI,FINLAND

[2] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(93)90354-K

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a Cs-137 source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described.

引用

页码：214 / 221

页数：8

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