HYDRODYNAMICS OF A DENSE-PLASMA CREATED DURING LASER ANNEALING PULSES

[1] LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL-FILM - TEST FOR EPITAXIAL-GROWTH FROM THE MELT [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (02) : 156 - 159

[2] EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON [J]. PHYSICS LETTERS A, 1981, 84 (08) : 448 - 450

[3] HYDRODYNAMICS OF AN ELECTRON-HOLE PLASMA CREATED BY A PULSE [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (02) : 81 - 86

[4] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +

[5] ON LASER ANNEALING AND LATTICE MELTING [J]. PHYSICS LETTERS A, 1980, 78 (5-6) : 477 - 480

[6] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607

[7] MURAKAMI K, 1980, 15TH P INT C PHYS SE, P1303

[8] GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 824 - 826

[9] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421

[10] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 422 - 426

[1] LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL-FILM - TEST FOR EPITAXIAL-GROWTH FROM THE MELT [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (02) : 156 - 159

[2] EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON [J]. PHYSICS LETTERS A, 1981, 84 (08) : 448 - 450

[3] HYDRODYNAMICS OF AN ELECTRON-HOLE PLASMA CREATED BY A PULSE [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (02) : 81 - 86

[4] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +

[5] ON LASER ANNEALING AND LATTICE MELTING [J]. PHYSICS LETTERS A, 1980, 78 (5-6) : 477 - 480

[6] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607

[7] MURAKAMI K, 1980, 15TH P INT C PHYS SE, P1303

[8] GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 824 - 826

[9] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421

[10] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 422 - 426