LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL-FILM - TEST FOR EPITAXIAL-GROWTH FROM THE MELT

被引：15

作者：

BENTINI, GG

COHEN, C

DESALVO, A

DRIGO, AV

机构：

[1] UNIV PARIS 7,ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

[2] UNIV BOLOGNA,FAC INGN,IST CHIM,I-40126 BOLOGNA,ITALY

[3] CNR,GRP NAZL STRUTTURA MAT UNIT,I-35100 PADUA,ITALY

[4] UNIV PADUA,IST FIS,I-35100 PADUA,ITALY

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.46.156

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：156 / 159

页数：4

共 14 条

[1] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3] 2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON [J].

BATTAGLIN, G ;

DELLAMEA, G ;

DRIGO, AV ;

FOTI, G ;

BENTINI, GG ;

SERVIDORI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01) :347-352

[4] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J].

KHAIBULLIN, IB ;

SHTYRKOV, EI ;

ZARIPOV, MM ;

BAYAZITOV, RM ;

GALJAUTDINOV, MF .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :225-233

[5] TIME-DEPENDENCE OF THE REFLECTIVITY OF SI AT 633 AND 488 NM DURING PULSED LASER ANNEALING [J].

NATHAN, MI ;

HODGSON, RT ;

YOFFA, EJ .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :512-513

[6] EXPERIMENTAL TEST OF THE NONTHERMAL THEORY OF LASER ANNEALING USING SILICON ON SAPPHIRE [J].

SAIHALASZ, GA ;

HODGSON, RT .

PHYSICS LETTERS A, 1980, 77 (05) :375-377

[7] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M [J].

SCHULTZ, JC ;

COLLINS, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :84-87

[8] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J].

SURKO, CM ;

SIMONS, AL ;

AUSTON, DH ;

GOLOVCHENKO, JA ;

SLUSHER, RE ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :635-637

[9] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

[10] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW .

PHYSICS LETTERS A, 1979, 74 (06) :422-426

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