PHYSICOCHEMICAL PROPERTIES OF PHOTO-CVD SILICON-NITRIDE THIN-FILMS

被引:10
作者
BERTI, M
MELIGA, M
ROVAI, G
STANO, S
TAMAGNO, S
机构
[1] CTR STUDI & LAB TELECOMUN,I-10148 TORINO,ITALY
[2] CISM,PADOVA,ITALY
关键词
D O I
10.1016/0040-6090(88)90699-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:279 / 290
页数:12
相关论文
共 16 条
[1]   SIMULTANEOUS NUCLEAR MICROANALYSIS OF NITROGEN AND OXYGEN ON SILICON [J].
BERTI, M ;
DRIGO, AV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 201 (2-3) :473-479
[3]   3-LAYER AND 4-LAYER LPE INGAAS(P) MUSHROOM STRIPE LASERS FOR LAMBDA = 130, 154, AND 166-MUM [J].
BURKHARD, H ;
KUPHAL, E .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :650-657
[4]   HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J].
CHOW, R ;
LANFORD, WA ;
WANG, KM ;
ROSLER, RS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633
[5]   CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J].
CLAASSEN, WAP ;
VALKENBURG, WGJN ;
HABRAKEN, FHPM ;
TAMMINGA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2419-2423
[6]   INTERCOMPARISON OF ABSOLUTE STANDARDS FOR RBS STUDIES [J].
COHEN, C ;
DAVIES, JA ;
DRIGO, AV ;
JACKMAN, TE .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :147-148
[7]  
HABRAKEN F, 1982, ACTA ELECTRON, V24, P203
[8]   HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].
LANFORD, WA ;
RAND, MJ .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477
[9]  
MAES HE, 1983, P ELECTROCHEM SOC S, V83, P177
[10]  
MAR KM, 1980, SOLID STATE TECHNOL, V23, P137