MODELING DEEP-LEVEL TRAP EFFECTS IN GAAS-MESFETS

被引：25

作者：

SON, I ^{[1
]}

TANG, TW ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01003 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：632 / 640

页数：9

共 22 条

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[7] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES
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[8] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS
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[9] KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059
[10] LOW-FIELD LOW-FREQUENCY DISPERSION OF TRANSCONDUCTANCE IN GAAS-MESFETS WITH IMPLICATIONS FOR OTHER RATE-DEPENDENT ANOMALIES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) : 257 - 267

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