PHOTO-IONIZATION CROSS-SECTION AND DENSITY OF INTERFACE STATES IN MOS STRUCTURES

被引：11

作者：

GREVE, DW ^{[1
]}

DAHLKE, WE ^{[1
]}

机构：

[1] LEHIGH UNIV, INST EMULS POLYMERS, SHERMAN FAIRCHILD LAB 161, BETHLEHEM, PA 18015 USA

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 12期

关键词：

D O I：

10.1063/1.91663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1002 / 1004

页数：3

共 17 条

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[2]

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[3]

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[4]

GREVE DW, 1979, THESIS LEHIGH U

[5]

GREVE DW, 1979, I PHYS C SER, V50, P107

[6] LOW-TEMPERATURE PHOTOCAPACITY MEASUREMENT IN MOS STRUCTURE [J].

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[7] ION-ELECTRON (CONFIGURATIONAL) INTERFACE STATES IN MOS STRUCTURES [J].

KAMIENIECKI, E .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :807-809

[8]

KAMIENIECKI E, 1978, PHYSICS SIO2 ITS INT, P417

[9] DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS [J].

KRIEGLER, RJ ;

DEVENYI, TF ;

CHIK, KD ;

SHAPPIR, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :398-401

[10] CHARACTERISTICS OF CR-SIO2-NSI TUNNEL-DIODES [J].

KUMAR, V ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :143-152

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