HIGH-SPEED INTEGRATED-CIRCUITS USING I-ALGAAS/N-GAAS DOPED-CHANNEL HETERO-MISFETS (DMTS)

被引：6

作者：

HIDA, H

TOYOSHIMA, H

OGAWA, Y

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 12期

关键词：

D O I：

10.1109/EDL.1987.26727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：557 / 559

页数：3

共 8 条

[1]

Hida H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P759

[2] A HIGH-CURRENT DRIVABILITY I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FET (DMT) [J].

HIDA, H ;

OKAMOTO, A ;

TOYOSHIMA, H ;

OHATA, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :625-626

[3] AN INVESTIGATION OF I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FETS (DMTS) - PROPERTIES AND PERFORMANCE POTENTIALITIES [J].

HIDA, H ;

OKAMOTO, A ;

TOYOSHIMA, H ;

OHATA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1448-1455

[4]

Jensen J. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P476

[5]

Kanamori M., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P49

[6] VERY HIGH-TRANSCONDUCTANCE SHORT-CHANNEL GAAS-MESFETS WITH GA0.3AL0.7AS BUFFER LAYER [J].

LEE, KY ;

ALMUDARES, M ;

BEAUMONT, SP ;

WILKINSON, CDW ;

FROST, J ;

STANLEY, CR .

ELECTRONICS LETTERS, 1987, 23 (01) :11-12

[7]

Mishra U. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P829

[8] GATE-LENGTH DEPENDENCE OF THE SPEED OF SSI CIRCUITS USING SUBMICROMETER SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR TECHNOLOGY [J].

SHAH, NJ ;

PEI, SS ;

TU, CW ;

TIBERIO, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :543-547

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