APPLICATIONS OF SIMOX TECHNOLOGY TO CMOS LSI AND RADIATION-HARDENED DEVICES

被引：6

作者：

IZUMI, K

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90810-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：124 / 128

页数：5

共 13 条

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[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

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[7]

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[9] RADIATION-HARDENED N-CHANNEL MOSFET ACHIEVED BY A COMBINATION OF POLYSILICON SIDEWALL AND SIMOX TECHNOLOGY [J].

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[10]

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