GROWTH OF QUASI-3-DIMENSIONAL MODULATION-DOPED SEMICONDUCTOR STRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

SAJOTO, T

JO, J

WEI, HP

SANTOS, M

SHAYEGAN, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：311 / 314

页数：4

共 14 条

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[9] GROWTH OF LOW-DENSITY TWO-DIMENSIONAL ELECTRON-SYSTEM WITH VERY HIGH MOBILITY BY MOLECULAR-BEAM EPITAXY [J].

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[10] REALIZATION OF A QUASI-3-DIMENSIONAL MODULATION-DOPED SEMICONDUCTOR STRUCTURE [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (09) :791-793

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