A 4-STATE EEPROM USING FLOATING-GATE MEMORY CELLS

被引:19
作者
BLEIKER, C
MELCHIOR, H
机构
关键词
D O I
10.1109/JSSC.1987.1052751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:460 / 463
页数:4
相关论文
共 6 条
[1]   FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].
FROHMANB.D .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :517-&
[2]   FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].
LENZLINGER, M ;
SNOW, EH .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+
[3]  
NISHI Y, 1981, APPLIED SOLID STAT S, V2, P121
[4]   CHARACTERISTICS AND RELIABILITY OF THE SEPROM CELL [J].
NOZAWA, H ;
NIITSU, Y ;
MATSUKAWA, N ;
MATSUNAGA, J ;
KOHYAMA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1413-1419
[5]   A THERMIONIC ELECTRON-EMISSION MODEL FOR CHARGE RETENTION IN SAMOS STRUCTURES [J].
NOZAWA, H ;
KOHYAMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L111-L112
[6]   A 16K E2PROM EMPLOYING NEW ARRAY ARCHITECTURE AND DESIGNED-IN RELIABILITY FEATURES [J].
YARON, G ;
PRASAD, SJ ;
EBEL, MS ;
LEONG, BMK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :833-841