CHARACTERISTICS AND RELIABILITY OF THE SEPROM CELL

被引：6

作者：

NOZAWA, H

NIITSU, Y

MATSUKAWA, N

MATSUNAGA, J

KOHYAMA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期

关键词：

D O I：

10.1109/T-ED.1984.21726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1413 / 1419

页数：7

共 21 条

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].

ANDERSON, RM ;

KERR, DR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4834-4836

[2]

BROWN DK, 1982, SPR ECS M, P357

[3] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].

DIMARIA, DJ ;

KERR, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :505-507

[4] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[5] FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].

FROHMANB.D .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :517-&

[6]

IIZUKA H, 1973, J JAPAN SOC APPL P S, V42, P158

[7]

IIZUKA H, 1974, IEEE T ELECTRON DEVI, V23, P379

[8]

KIYOSUMI F, 1982, SPR ECS M, P316

[9] ERASE MODEL IN DOUBLE POLY-SI GATE N-CHANNEL FAMOS DEVICES [J].

KONDO, R ;

TAKEDA, E ;

HAGIWARA, T ;

HORIUCHI, M ;

ITOH, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :369-374

[10] THE OXIDATION OF SHAPED SILICON SURFACES [J].

MARCUS, RB ;

SHENG, TT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1278-1282

← 1 2 3 →