CHARACTERISTICS AND RELIABILITY OF THE SEPROM CELL

被引：6

作者：

NOZAWA, H

NIITSU, Y

MATSUKAWA, N

MATSUNAGA, J

KOHYAMA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 10期

关键词：

D O I：

10.1109/T-ED.1984.21726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1413 / 1419

页数：7

共 21 条

[11] POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN [J].

MARCUS, RB ;

SHENG, TT ;

LIN, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1282-1289

[12]

MASUOKA F, 1973, SPR ECS M, P221

[13] SELECTIVE POLYSILICON OXIDATION TECHNOLOGY FOR VLSI ISOLATION [J].

MATSUKAWA, N ;

NOZAWA, H ;

MATSUNAGA, J ;

KOHYAMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :561-567

[14]

MATSUKAWA N, 1983, SEP S VLSI TECHN, P108

[15]

NIITSU Y, 1983, C SOLID STATE DEVICE, P277

[16]

NING TH, 1974, J APPL PHYS, V45, P5373, DOI 10.1063/1.1663246

[17] A THERMIONIC ELECTRON-EMISSION MODEL FOR CHARGE RETENTION IN SAMOS STRUCTURES [J].

NOZAWA, H ;

KOHYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L111-L112

[18]

STEINHEIM M, 1983, J ELECTROCHEM SOC, V130, P1735

[19] INTERMEDIATE OXIDE FORMATION IN DOUBLE-POLYSILICON GATE MOS STRUCTURE [J].

SUNAMI, H ;

KOYANAGI, M ;

HASHIMOTO, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2499-2506

[20]

SZE SM, 1969, PHYSICS SEMICONDUCTO

← 1 2 3 →