TUNNELING SPECTROSCOPY AND BAND-STRUCTURE EFFECTS IN N GASB UNDER PRESSURE

被引：13

作者：

GUETIN, P

SCHREDER, G

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 6卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.6.3816

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3816 / &

共 48 条

[11]

DUKE CB, 1969, TUNNELING PHENOMENA, P40

[12] SURFACE-PLASMON EXCITATION BY ELECTRON TUNNELING [J].

ECONOMOU, EN ;

NGAI, KL .

PHYSICAL REVIEW B, 1971, 4 (11) :4105-&

[13] EFFECT OF PRESSURE ON ABSORPTION EDGES OF SOME III-V, II-VI, AND I-VII COMPOUNDS [J].

EDWARDS, AL ;

DRICKAMER, HG .

PHYSICAL REVIEW, 1961, 122 (04) :1149-&

[14] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].

ESAKI, L ;

MIYAHARA, Y .

SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&

[15]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[16] EFFECT OF ELASTIC STRAIN ON INTERBAND TUNNELING IN SB-DOPED GERMANIUM [J].

FRITZSCHE, H ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1963, 130 (02) :617-&

[17] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[18] METAL-SEMICONDUCTOR BARRIER-HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD-DEGENERATE 1-CARRIER SYSTEM [J].

GOODMAN, AM ;

PERKINS, DM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) :3351-&

[19] EFFECTS OF AN ION-BOMBARDMENT ON CHARACTERISTICS OF A METAL/N-GAAS TUNNEL CONTACT [J].

GUETIN, P ;

SCHREDER, G .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :549-&

[20] TUNNELING IN PB/N-GAAS JUNCTIONS UNDER HYDROSTATIC PRESSURE [J].

GUETIN, P ;

SCHREDER, G .

SOLID STATE COMMUNICATIONS, 1971, 9 (09) :591-&

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